STPS20H100C STMicroelectronics, STPS20H100C Datasheet - Page 5

• Manufacturer Part Number: STPS20H100C
• Description: 100 V power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS20H100C

• Insulated Package: TO-220FPAB

Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.0
0.8
0.6
0.4
0.0
1E+4
1E+3
1E+0
100.0
0.2
1E+2
1E+1
1E-2
1E-1
10.0
1E-3
1.0
0.1
0.0
Z
0
I (µA)
th(j-c)
I
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220AB, D PAK, I PAK
R
FM
(A)
10
/R
th(j-c)
(typical values)
0.2
T =150°C
T =125°C
T =100°C
T =25°C
j
j
j
j
T =125°C
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
forward current
(maximum values, per diode)
j
2
20
(typical values)
T =150°C
j
2
1E-2
30
0.4
40
V
t (s)
V (V)
p
FM
R
0.6
50
(V)
60
T =25°C
j
1E-1
0.8
T =125°C
j
70
δ
=t /T
80
p
1.0
Doc ID 5386 Rev 7
T
90
tp
1E+0
100
1.2
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
1000
500
200
100
0
1E-2
0
R
Z
th(j-a)
1
th(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
C(pF)
TO-220FPAB
(°C/W)
5
/R
th(j-c)
2
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
reverse voltage applied
(typical values, per diode)
ambient versus copper surface
under tab
10
1E-1
15
5
S(Cu)(cm²)
t (s)
V (V)
p
20
R
10
25
1E+0
20
30
δ
=tp/T
V
OSC
50
F=1MHz
T =25°C
35
T
=30mV
j
tp
RMS
5/11
1E+1
100
40