STM32L151VC STMicroelectronics, STM32L151VC Datasheet - Page 70

• Manufacturer Part Number: STM32L151VC
• Description: Ultra-low-power ARM Cortex-M3 MCU with 256 Kbytes Flash, 32 MHz CPU, LCD, USB, 3xOp-amp
• Manufacturer: STMicroelectronics

Specifications of STM32L151VC

• Operating Power Supply Range: 1.65 V to 3.6 V (without BOR) or 1.8 V to 3.6 V
• 7 Modes: Sleep, Low-power run (11 μA at 32 kHz) , Low-power sleep (4.4 μA), Stop with RTC, Stop (650 nA), Standby with RTC, Standby (300 nA)
• Ultralow Leakage Per I/o: 50 nA max
• Fast Wakeup Time From Stop: 8 μs
• Core: ARM 32-bit Cortex™-M3 CPU
• Dma: 12-channel DMA controller
• 11 Timers: one 32-bit and six 16-bit general-purpose timers, two 16-bit basic timers, two watchdog timers (independent and window)

Electrical characteristics
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Flash memory
Table 32.
1. Guaranteed by design, not tested in production.
Table 33.
1. Based on characterization not tested in production.
2. Characterization is done according to JEDEC JESD22-A117.
Symbol
Symbol
N
t
RET
V
t
CYC
I
prog
DD
DD
(2)
(2)
Operating voltage
Read / Write / Erase
Programming time for
word or half-page
Average current during
the whole programming /
erase operation
Cycling (erase / write )
Program memory
Cycling (erase / write )
EEPROM data memory
Data retention (program memory) after
10 kcycles at T
Data retention (EEPROM data memory)
after 300 kcycles at T
Data retention (program memory) after
10 kcycles at T
Data retention (EEPROM data memory)
after 300 kcycles at T
Maximum current (peak)
during the whole pro-
gramming / erase opera-
tion
Flash memory characteristics
Flash memory endurance and data retention
Parameter
Parameter
A
A
= 85 °C
= 105 °C
A
A
Doc ID 022799 Rev 1
= 85 °C
= 105 °C
Erasing
Programming
T
A
= 25 °C, V
Conditions
DD
T
105 °C
T
T
A
= 3.6 V
RET
RET
= -40°C to
Conditions
= +85 °C
= +105 °C
STM32L151xC, STM32L152xC
1.65
Min
Min
300
30
30
10
10
10
(1)
3.28
3.28
Typ
600
1.5
Value
Typ Max
Max
3.94
3.94
TBD
TBD
3.6
(1)
kcycles
years
Unit
Unit
mA
ms
µA
V