SPB80N06S2L09 Infineon Technologies, SPB80N06S2L09 Datasheet - Page 2

• Manufacturer Part Number: SPB80N06S2L09
• Description: OptiMOS Power-Transistor
• Manufacturer: Infineon Technologies

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Current limited by bondwire; with a R
and calculated with max. source pin temperature of 85°C.
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
= 125 µA
=55V, V
=55V, V
=0V, I
=20V, V
=4.5V, I
=10V, I
2
cooling area
D
D
=1mA
D
GS
GS
DS
=52A
=52A
=0V, T
=0V, T
=0V
j
j
=25°C
=125°C
2)
GS
= V
thJC
j
DS
= 25 °C, unless otherwise specified
= 0.8 K/W the chip is able to carry I
Preliminary data
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJC
thJA
thJA
min.
min.
1.2
55
-
-
-
-
-
-
-
-
-
D
= 103A
Values
Values
SPB80N06S2L-09
0.01
SPP80N06S2L-09
typ.
typ.
1.6
8.7
1
1
7
-
-
-
-
-
max.
max.
11.3
100
100
8.5
0.8
62
62
40
2001-06-07
1
2
-
Unit
V
µA
nA
mΩ
Unit
K/W