SPB80N06S2L09 Infineon Technologies, SPB80N06S2L09 Datasheet - Page 3

• Manufacturer Part Number: SPB80N06S2L09
• Description: OptiMOS Power-Transistor
• Manufacturer: Infineon Technologies

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Preliminary data
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=73A
=80A, R
=25°C
=30V, I
/dt=100A/µs
≥2*I
=0V, V
=30V, V
=44V, I
=44V, I
=0 to 10V
=44V, I
=0V, I
Conditions
D
*R
F =
G
F
DS
D
D
D
=80A
=2.3Ω
DS(on)max
GS
l
S
=80A
=80A,
=80A
=25V,
,
=4.5V,
,
min.
47
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SPB80N06S2L-09
SPP80N06S2L-09
Values
2684
typ.
597
150
8.6
3.6
94
10
19
53
18
25
78
49
60
1
-
-
2001-06-07
max.
3355 pF
746
225
320
1.3
15
28
80
27
11
38
98
80
60
75
-
-
Unit
S
ns
nC
V
A
V
ns
nC