SPB80N06S2L09 Infineon Technologies, SPB80N06S2L09 Datasheet - Page 4

• Manufacturer Part Number: SPB80N06S2L09
• Description: OptiMOS Power-Transistor
• Manufacturer: Infineon Technologies

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
200
160
140
120
100
W
A
80
60
40
20
0
3
2
1
0
10
0
SPP80N06S2L-09
SPP80N06S2L-09
DS
-1
C
20
)
)
40
60
10
0
80 100 120 140 160
C
= 25 °C
10
1
DC
V
T
V
t p = 17.0µs
°C
C
Preliminary data
DS
100 µs
1 ms
10 ms
190
10
Page 4
2
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
10
A
90
70
60
50
40
30
20
10
= f (t
-1
-2
-3
-4
-5
0
1
0
10
0
C
SPP80N06S2L-09
SPP80N06S2L-09
-7
)
20
p
10
)
single pulse
GS
-6
40
≥ 10 V
10
p
60
/T
-5
80 100 120 140 160
10
SPB80N06S2L-09
SPP80N06S2L-09
-4
10
-3
10
2001-06-07
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
p
°C
C
190
10
0