A43E16161V AMIC Technology, Corp., A43E16161V Datasheet - Page 28

no-image

A43E16161V

Manufacturer Part Number
A43E16161V
Description
1M x 16-Bit x 2 Banks Low Power Synchronous DRAM
Manufacturer
AMIC Technology, Corp.
Datasheet
PRELIMINARY
Page Write Cycle at Different Bank @Burst Length=4
CLOCK
A10/AP
ADDR
* Note:
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and precharge banks must be the same.
DQM
CKE
RAS
CAS
DQ
CS
BA
WE
Row Active with
0
(A-Bank)
RAa
RAa
1
(August, 2005, Version 0.0)
2
3
(A-Bank)
DAa0 DAa1 DAa2
CAa
Write
4
Row Active
(B-Bank)
RBb
RBb
5
6
DAa3
7
t
CDL
(B-Bank)
Write
DBb0
CBb
8
DBb1
27
9
High
DBb2 DBb3 DAc0
10
11
(A-Bank)
CAc
Write
12
DAc1
13
(B-Bank)
DBd0 DBd1
Write
CBd
AMIC Technology, Corp.
14
*Note 1
15
t
RDL
16
(Both Banks)
Precharge
A43E16161
*Note 2
17
: Don't care
18
19

Related parts for A43E16161V