MPC8321E Freescale Semiconductor, Inc, MPC8321E Datasheet - Page 13

• Manufacturer Part Number: MPC8321E
• Description: Mpc8321e Powerquicc Ii Pro Processor
• Manufacturer: Freescale Semiconductor, Inc

Output high voltage
Output low voltage
Output low voltage
Input high voltage
Input low voltage
Input current
Note:
1. This specification applies when operating from 3.3 V supply.
5.1
Table 11
6
This section describes the DC and AC electrical specifications for the DDR1 and DDR2 SDRAM interface
of the MPC8323E. Note that DDR1 SDRAM is Dn_GV
Dn_GV
6.1
Table 12
MPC8323E when Dn_GV
Freescale Semiconductor
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. Dn
2. MVREFn
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Peak-to-peak noise on MVREFn
equal to MVREFn
MPC8323E PowerQUICC™ II Pro Integrated Communications Processor Family Hardware Specifications, Rev. 1
TT
_
GV
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
Parameter/Condition
DDR1 and DDR2 SDRAM
DD
DD
provides the DC electrical characteristics for the MPC8323E reset signals mentioned in
provides the recommended operating conditions for the DDR2 SDRAM component(s) of the
Characteristic
Reset Signals DC Electrical Characteristics
DDR1 and DDR2 SDRAM DC Electrical Characteristics
REF
(typ) = 1.8 V. The AC electrical specifications are the same for DDR1 and DDR2 SDRAM.
is expected to be within 50 mV of the DRAM Dn
Table 12. DDR2 SDRAM DC Electrical Characteristics for Dn
is expected to be equal to 0.5 × Dn
REF
OUT
OUT
. This rail should track variations in the DC level of MVREFn
= 0.280 V)
= 1.35 V)
DD
Table 11. Reset Signals DC Electrical Characteristics
(typ) = 1.8 V
REF
MVREFn
may not exceed ±2% of the DC value.
Dn
Symbol
Symbol
V
V
V
V
V
_
I
V
V
I
OH
OL
IN
V
I
I
OL
IH
OH
IL
OZ
OL
GV
TT
IH
IL
DD
REF
.
_
GV
0 V ≤ V
I
OH
I
DD
I
OL
MVREFn
OL
Condition
MVREFn
0.49 × Dn
, and to track Dn
= –6.0 mA
= 3.2 mA
= 6.0 mA
IN
—
—
≤
_
GV
V
≤ OV
–13.4
1.71
–0.3
–9.9
13.4
OUT
Min
REF
REF
DD
DD
_
DD
≤
GV
at all times.
+ 0.125
– 0.04
(typ) = 2.5 V and DDR2 SDRAM is
Dn
DD
_
_
GV
GV
DD
–0.3
Min
DD
2.4
2.0
—
—
—
.
MVREFn
MVREFn
DC variations as measured at the receiver.
0.51 × Dn
REF
Dn
_
.
_
GV
GV
Max
1.89
REF
9.9
—
—
REF
OV
DD
DD
_
DD
GV
+ 0.3
Max
– 0.125
+ 0.04
0.5
0.4
0.8
(typ) = 1.8 V
±5
—
DD
+ 0.3
DDR1 and DDR2 SDRAM
Unit
mA
mA
μA
Unit
V
V
V
V
V
μA
V
V
V
V
V
Table
Notes
Notes
1
2
3
4
1
1
1
1
13
9.