MT16JSF25664HZ Micron Semiconductor Products, MT16JSF25664HZ Datasheet - Page 10

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MT16JSF25664HZ

Manufacturer Part Number
MT16JSF25664HZ
Description
Ddr3 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 10: Operating Conditions (Continued)
PDF: 09005aef83364b70
jsf16c256_512x64hz.pdf - Rev. B 12/09
Sym-
I
bol
VREF
I
T
T
OZ
I
I
A
C
Parameter
Input leakage current;
Any input 0V ≤ V
V
(All other pins not under
test = 0V)
Output leakage current;
0V ≤ V
DQ and ODT are
disabled; ODT is HIGH
V
V
(All other pins not under test = 0V)
Module ambient
operating temperature
DDR3 SDRAM component
case operating tempera-
ture
REF
REF
REFDQ
input 0V ≤ V
supply leakage current;
OUT
= V
≤ V
DD
/2 or V
Notes:
DD
;
IN
IN
≤ 0.95V
≤ V
REFCA
1. V
2. T
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
4. The refresh rate is required to double when 85°C < T
DD
;
= V
and address signals’ voltage margin and will reduce timing margins.
available on Micron’s Web site.
A
TT
Address in-
puts, RAS#,
CAS#, WE#,
BA
S#, CKE, ODT,
CK, CK#
DM
DQ, DQS,
DQS#
Commercial
Industrial
Commercial
Industrial
and T
DD
termination voltage in excess of the stated limit will adversely affect the command
/2
2GB, 4GB (x64, DR) 204-Pin Halogen-Free DDR3 SODIMM
C
are simultaneous requirements.
Min
–32
–16
–10
–16
–40
–40
10
–4
0
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Nom
0
0
0
0
0
C
Electrical Specifications
≤ 95°C.
Max
+32
+16
+10
+16
+70
+85
+95
+95
+4
© 2009 Micron Technology, Inc. All rights reserved.
Units
µA
µA
µA
°C
°C
°C
°C
Notes
2, 3, 4
2, 3

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