PBRN113Z NXP Semiconductors, PBRN113Z Datasheet - Page 8

• Manufacturer Part Number: PBRN113Z
• Description: Pbrn113z Series Npn 800 Ma, 40 V Biss Rets; R1 = 1 Kohm, R2 = 10 Kohm
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PBRN113Z_SER_1
Product data sheet
Table 8.
T
[1]
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
Pulse test: t
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
p
300 s;
Rev. 01 — 26 February 2007
0.02.
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 10 k
Conditions
V
I
V
I
V
I
V
I
V
I
V
I
V
I
I
I
I
I
I
I
I
I
I
I
V
I
V
I
V
I
f = 1 MHz
E
B
C
C
C
C
C
C
B
C
B
C
B
C
B
C
B
C
C
E
CB
CE
EB
CE
CE
CE
CE
CE
CE
CB
= 0 A
= 0 A
= 2.5 mA
= 10 mA
= 10 mA
= 6 mA
= 8 mA
= i
= 0 A
= 50 mA
= 300 mA
= 600 mA
= 800 mA
= 50 mA;
= 200 mA;
= 500 mA;
= 600 mA;
= 800 mA;
= 100 A
= 20 mA
= 5 V;
= 30 V;
= 30 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 0.3 V;
= 10 V;
e
= 0 A;
PBRN113Z series
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
300
500
500
450
-
-
-
-
-
0.3
0.4
0.7
9
-
Typ
-
-
-
450
750
720
650
25
60
160
270
0.56
0.5
0.7
1
10
7
© NXP B.V. 2007. All rights reserved.
Max
100
0.5
0.8
-
-
-
-
35
85
220
550
1.15
1
1.4
1.3
11
-
Unit
nA
mA
mV
mV
mV
mV
V
V
V
k
pF
A
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