MRF7S15100H

Manufacturer Part NumberMRF7S15100H
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
MRF7S15100H datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1470 to
1510 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
• Typical Single - Carrier W - CDMA Performance: V
600 mA, P
= 23 Watts Avg., f = 1507.5 MHz, 3GPP Test Model 1,
out
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 19.5 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW
Output Power
• Typical P
@ 1 dB Compression Point ' 100 Watts CW
out
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
(1)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 55 W CW
Case Temperature 77°C, 23 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Document Number: MRF7S15100H
MRF7S15100HR3
MRF7S15100HSR3
= 28 Volts, I
=
DD
DQ
CASE 465- 06, STYLE 1
MRF7S1500HR3
CASE 465A - 06, STYLE 1
MRF7S1500HSR3
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Symbol
R
θJC
MRF7S15100HR3 MRF7S15100HSR3
Rev. 0, 7/2008
1510 MHz, 23 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
Value
Unit
- 0.5, +65
Vdc
- 6.0, +10
Vdc
32, +0
Vdc
- 65 to +150
°C
150
°C
225
°C
(2)
Value
Unit
°C/W
0.65
0.74
1

MRF7S15100H Summary of contents

  • Page 1

    ... Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 = 28 Volts ...

  • Page 2

    ... W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S15100HR3 MRF7S15100HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

  • Page 3

    ... Min Typ Max = 600 mA, 1470 - 1510 MHz Bandwidth — 100 — — 40 — — 70 — — 0.2 — — 4.5 — — 1.9 — — 23 — — 0.010 — — 0.007 — MRF7S15100HR3 MRF7S15100HSR3 Unit W MHz MHz dB ° ns ° dB/°C W/°C 3 ...

  • Page 4

    ... Z12 1.288″ x 0.144″ Microstrip Z13 1.288″ x 0.369″ Microstrip Z14 1.330″ x 0.112″ Microstrip Figure 1. MRF7S15100HR3(HSR3) Test Circuit Schematic Table 5. MRF7S15100HR3(HSR3) Test Circuit Component Designations and Values Part B1 Short Ferrite Bead C1, C6, C7 Chip Capacitors C2 0.5 pF Chip Capacitor ...

  • Page 5

    ... MRF7S15100H/HS Rev. 3 Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C11 C9 C10 C6 C12 C13 C7 MRF7S15100HR3 MRF7S15100HSR3 5 ...

  • Page 6

    ... Figure 4. CW Power Gain versus Output Power −1 18 −2 17 −3 16 −4 15 −5 15 MRF7S15100HR3 MRF7S15100HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 600 mA, Single−Carrier W−CDMA DQ 3.84 MHz Channel Bandwidth, Input Signal PAR = 7 0.01% Probability on CCDF PARC IRL 1425 1450 1475 ...

  • Page 7

    ... Figure 10. Single - Carrier W - CDMA Spectrum 90 −18 25_C 75 −25 −30_C 25_C 60 −32 85_C − −46 15 −53 0 −60 100 200 0 −5 −10 −15 −20 −25 2250 3.84 MHz Channel BW −ACPR in 3.84 MHz −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −3.6 −1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRF7S15100HR3 MRF7S15100HSR3 7 ...

  • Page 8

    ... Figure 11. Series Equivalent Source and Load Impedance MRF7S15100HR3 MRF7S15100HSR3 Ω load f = 1570 MHz f = 1410 MHz f = 1570 MHz f = 1410 MHz Z source Vdc 600 mA Avg out source load MHz W W 1410 2.51 - j5.82 4.12 - j4.20 1430 2.53 - j5.58 3.95 - j4.07 1450 2.55 - j5.36 3.78 - j3.94 1470 2.58 - j5.15 3.61 - j3.80 1490 2.62 - j4.97 3.45 - j3.65 1510 2 ...

  • Page 9

    ... Vdc 600 mA, Pulsed μsec(on), 10% Duty Cycle 1500 MHz INPUT POWER (dBm) in Test Impedances per Compression Level Z Z source Ω P1dB 2.02 + j6.21 2.00 - j3.65 Figure 12. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual load Ω MRF7S15100HR3 MRF7S15100HSR3 9 ...

  • Page 10

    ... U 4X (FLANGE (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S15100HR3 MRF7S15100HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc (LID) aaa ccc ...

  • Page 11

    ... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 July 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S15100HR3 MRF7S15100HSR3 11 ...

  • Page 12

    ... Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S15100HR3 MRF7S15100HSR3 Document Number: MRF7S15100H Rev. 0, 7/2008 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...