MRF7S15100H Freescale Semiconductor, Inc, MRF7S15100H Datasheet - Page 9

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MRF7S15100H

Manufacturer Part Number
MRF7S15100H
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
56
55
54
53
52
51
50
49
48
47
46
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
27
P1dB
Figure 12. Pulsed CW Output Power
28
P1dB = 50.95 dBm (125 W)
Test Impedances per Compression Level
versus Input Power @ 28 V
29
30
P
2.02 + j6.21
in
, INPUT POWER (dBm)
Z
P3dB = 51.63 dBm (146 W)
V
10 μsec(on), 10% Duty Cycle, f = 1500 MHz
source
DD
31
Ω
= 28 Vdc, I
32
DQ
33
= 600 mA, Pulsed CW
2.00 - j3.65
34
Z
load
Ω
35
Ideal
36
Actual
MRF7S15100HR3 MRF7S15100HSR3
37
9

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