BLW32 NXP Semiconductors, BLW32 Datasheet - Page 2

• Manufacturer Part Number: BLW32
• Description: Uhf Linear Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
QUICK REFERENCE DATA
R.F. performance
Note
1. Three-tone test method (vision carrier 8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
PIN CONFIGURATION
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
MODE OF OPERATION
class-A; linear amplifier
UHF linear power transistor
peak sync level.
handbook, halfpage
Fig.1 Simplified outline. SOT122A.
Top view
1
4
f
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a
envelope with ceramic cap.
MHz
vision
860
860
2
MBK187
3
V
25
25
V
CE
2
1
4
" capstan
mA
150
150
I
C
T
70
25
C
h
PINNING - SOT122A.
PIN
d
1
2
3
4
im
dB
60
60
(1)
collector
emitter
base
emitter
typ.
P
o sync
Product specification
DESCRIPTION
W
0,63 typ.
(1)
0,5
BLW32
dB
G
p
11
12,2