BLW32 NXP Semiconductors, BLW32 Datasheet - Page 9

• Manufacturer Part Number: BLW32
• Description: Uhf Linear Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Information for wideband application from 470 to 860 MHz available on request.
1. Three-tone test method (vision carrier 8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
2. Two-tone test method (vision carrier 0 dB, sound carrier 7 dB), zero dB corresponds to peak sync level.
August 1986
handbook, full pagewidth
C1
UHF linear power transistor
Fig.11 Intermodulation distortion (d
peak sync level.
Intermodulation distortion of input signal
Cross-modulation distortion (d
0 dB to 20 dB.
(dB)
d im
Fig.10 Bias circuit for class-A amplifier at
50
55
60
65
0
C2
Typical values; V
R4
f
vision
D1
D2
R1
R2
R3
= 860 MHz.
R5
C3
CE
C4
= 25 V; I
TR1
0.5
cm
R6
) is the voltage variation (%) of sound carrier when vision carrier is switched from
im
C
R7
R8
)
= 150 mA; f
(1.)
and cross-modulation distortion (d
MGP437
75 dB.
R9
0
vision
V s
V CC
V BB
= 860 MHz;
9
1
d cm
List of components:
d im
C1 = 100 pF ceramic capacitor
C2 = C3 = 100 nF polyester capacitor
C4 = 10 F/25 V solid aluminium
R1 = 150
R2 = 100
R3 = 82
R4 = R5 = 2,2 k carbon resistor (0,25 W)
R6 = 12
R7 = R8 = 820
R9 = 33
D1
D2
TR1
electrolytic capacitor
= BZY88-C3V3
= BY206
= BD136
carbon resistor (0,5 W)
carbon resistor (0,25 W)
carbon resistor (0,25 W)
preset potentiometer (0,1 W)
carbon resistor (0,25 W)
T
h
= 25 C;
cm
carbon resistor (0,25 W)
)
(2.)
1.5
as a function of output power.
P o sync (W)
T
h
= 70 C.
Product specification
MGP438
BLW32
2
30
20
10
0
d cm
(%)