BLW32 NXP Semiconductors, BLW32 Datasheet - Page 5

• Manufacturer Part Number: BLW32
• Description: Uhf Linear Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. Measured under pulse conditions: t
2. Measured under pulse conditions: t
August 1986
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
D.C. current gain
Collector-emitter saturation voltage
Transition frequency at f = 500 MHz
Collector capacitance at f = 1 MHz
Feedback capacitance at f = 1 MHz
Collector-stud capacitance
j
= 25 C unless otherwise specified
UHF linear power transistor
V
open base; I
open collector; I
V
V
I
I
I
I
I
C
C
C
E
C
I
I
BE
BE
BE
E
E
= I
= 150 mA; V
= 150 mA; V
= 300 mA; I
= 10 mA; V
= 150 mA; V
= 300 mA; V
= 0; I
= 0; V
= 0; V
e
= 0; V
C
CE
CE
= 2 mA
C
CB
= 30 V
= 30 V; T
CE
B
= 15 mA
CE
CE
(1)
= 25 V
= 30 mA
E
CB
CB
= 25 V
= 1 mA
= 25 V
= 25 V; T
= 25 V
= 25 V
j
= 175 C
j
= 175 C
(1)
(2)
p
p
300 s;
50 s;
0,01.
0,02.
5
V
V
V
I
I
h
h
V
f
f
C
C
C
CES
CES
T
T
FE
FE
(BR)CES
(BR)CEO
(BR)EBO
CEsat
c
re
cs
typ.
typ.
typ.
typ.
typ.
typ.
typ.
Product specification
120
500 mV
0,5 mA
1,2 mA
3,5 GHz
3,4 GHz
3,7 pF
1,9 pF
1,2 pF
50 V
30 V
20
40
4 V
BLW32