STTH6110T STMicroelectronics, STTH6110T Datasheet

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STTH6110T

Manufacturer Part Number
STTH6110T
Description
Ultrafast Recovery - High Voltage Diode
Manufacturer
STMicroelectronics
Datasheet

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Main product characteristics
Features and benefits
Description
The compromise-free, high quality design of this
diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.
These demanding applications include industrial
power supplies, motor control, and similar
industrial systems that require rectification and
freewheeling. These diodes also fit into auxiliary
functions such as snubber, bootstrap, and
demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate advantage for reducing
maintenance of the equipment
March 2006
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Insulated package
– Electrical insulation = 2500 V
Capacitance = 45 pF
V
t
V
rr
I
F
F(AV)
RRM
(typ)
T
(typ)
j
2 x 30 A
1000 V
150° C
42 ns
1.3 V
RMS
Ultrafast recovery - high voltage diode
Rev 1
Order codes
A2
STTH6110TV1
STTH6110TV1
STTH6110TV2
Part Number
K2
A2
A1
ISOTOP
A1
K2
K1
K1
STTH6110TV
K1
STTH6110TV2
STTH6110TV1
STTH6110TV2
A1
A2
K1
ISOTOP
Marking
A1
K2
A2
www.st.com
K2
1/8
8

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STTH6110T Summary of contents

Page 1

... March 2006 Ultrafast recovery - high voltage diode 1000 V 150° 1 ISOTOP STTH6110TV1 Order codes RMS Part Number STTH6110TV1 STTH6110TV2 Rev 1 STTH6110TV ISOTOP STTH6110TV2 Marking STTH6110TV1 STTH6110TV2 www.st.com 1/8 8 ...

Page 2

... Test conditions T = 25° 125° 25° 100° 150° (RMS) STTH6110TV Value 1000 60° 350 240 - 150 150 Value 1.4 0.75 ° C/W 0 th(c) Min. Typ Max. 15 RRM ...

Page 3

... STTH6110TV Table 4. Dynamic characteristics Symbol Parameter t Reverse recovery time rr I Reverse recovery current RM S Softness factor t Forward recovery time fr V Forward recovery voltage FP Figure 1. Conduction losses versus average current P(W) 70 =0.1 =0.2 =0. (A) F(AV Figure 3. Relative variation of thermal impedance junction to case ...

Page 4

... F 50 100 150 200 250 300 350 Relative variations of dynamic parameters versus junction temperature S factor Reference (° 100 STTH6110TV F(AV F(AV F(AV) 400 450 500 F(AV) V =600V R =125°C j 125 ...

Page 5

... STTH6110TV Figure 9. Transient peak forward voltage versus dI /dt (typical values ( F(AV) T =125° /dt(A/µ 100 200 300 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 100 Figure 10. Forward recovery time versus ...

Page 6

... JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: www.st.com. 6 Ø STTH6110TV DIMENSIONS REF. Millimeters Inches Min. Max Min. A 11.80 12.20 0.465 A1 8.90 9.10 0.350 B 7 ...

Page 7

... STTH6110TV 3 Ordering information Part Number STTH6110TV1 STTH6110TV2 4 Revision history Date 22-Feb-2006 Marking Package STTH6110TV1 ISOTOP STTH6110TV2 ISOTOP Revision 1 First issue. Ordering information Weight Base qty Delivery mode Tube Tube Description of Changes 7/8 ...

Page 8

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STTH6110TV ...

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