STTH6110T STMicroelectronics, STTH6110T Datasheet - Page 3

• Manufacturer Part Number: STTH6110T
• Description: Ultrafast Recovery - High Voltage Diode
• Manufacturer: STMicroelectronics

STTH6110TV
Table 4.
Figure 1.
Figure 3.
Symbol
V
I
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
70
60
50
40
30
20
10
RM
t
t
S
0
FP
1.E-03
rr
fr
0
Z
P(W)
th(j-c)
Single pulse
Reverse recovery time
Reverse recovery current
Softness factor
Forward recovery time
Forward recovery voltage
/R
5
th(j-c)
Dynamic characteristics
Conduction losses versus
average current
Relative variation of thermal
impedance junction to case
versus pulse duration
1.E-02
10
=0.05
Parameter
15
I
=0.1
F(AV)
1.E-01
20
(A)
=0.2
t (s)
25
p
1.E+00
30
=0.5
T
35
I
V
I
V
I
V
I
V
I
V
I
V
I
T
F
F
F
F
F
F
F
=1
j
R
R
R
R
R
FR
= 1 A, dI
= 1 A, dI
= 1 A, dI
= 30 A, dI
= 30 A, dI
= 30 A
= 30 A, dI
= 25° C
1.E+01
= 30 V, T
= 30 V, T
= 30 V, T
= 600 V, T
= 600 V, T
= 1.5 x V
40
Test conditions
F
F
F
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -100 A/µs,
/dt = -200 A/µs,
F
F
F
j
j
j
dI
/dt = -200 A/µs,
/dt = -200 A/µs,
/dt = 100 A/µs,
= 25° C
= 25° C
= 25° C
Fmax
j
j
F
= 125° C
= 125° C
60
50
40
30
20
10
200
180
160
140
120
100
/dt = 100 A/µs
80
60
40
20
0
0
I
0
0.0
RM
, T
I
FM
V
T
(A)
j
j
R
=125°C
(A)
=600V
= 25° C
50
0.5
forward current
Peak reverse recovery current
versus dI
Forward voltage drop versus
100
I
F
=0.5 x I
150
1.0
F(AV)
(Typical values)
(Maximum values)
200
T
j
=150°C
T
F
1.5
j
=150°C
/dt (typical values)
250
Min.
I
F
= I
F(AV)
2.0
dI /dt(A/µs)
300
F
Typ
53
42
24
350
1
5
V
2.5
Characteristics
FM
I
(Maximum values)
F
(V)
= 2 x I
400
Max.
100
450
T
70
55
32
j
=25°C
3.0
F(AV)
450
Unit
500
3.5
ns
ns
A
V
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