STTH6110T STMicroelectronics, STTH6110T Datasheet - Page 2

• Manufacturer Part Number: STTH6110T
• Description: Ultrafast Recovery - High Voltage Diode
• Manufacturer: STMicroelectronics

Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/8
Symbol
Symbol
I
F(RMS)
V
I
V
I
I
I
F(AV)
T
FRM
FSM
R
RRM
T
F
stg
(1)
(2)
j
Symbol
R
R
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
Surge non repetitive forward current t
Storage temperature range
Maximum operating junction temperature
th(j-c)
th(c)
p
p
Characteristics
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Thermal parameters
When the diodes are used simultaneously:
∆T
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 1.3 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
j(diode1)
Parameter
F(AV)
= P
(diode1)
Junction to case
Coupling thermal resistance
+ 0.013 I
x
Parameter
R
F
th(j-c)
2
(RMS)
(per diode) + P
Parameter
T
T
T
T
T
Per diode
t
j
j
j
j
j
p
p
= 25° C
= 125° C
= 25° C
= 100° C
= 150° C
= 5 µs, F = 5 kHz square
= 10 ms Sinusoidal
Test conditions
(diode2)
Per diode
V
I
F
R
Total
= 30 A
= V
x
RRM
R
th(c)
T
c
Min.
= 60° C
Value
0.75
1.4
0.1
Typ
1.4
1.3
10
-65 to + 150
Value
1000
350
240
150
60
30
STTH6110TV
Max.
100
2.0
1.8
1.7
15
° C/W
Unit
Unit
Unit
°C
°C
µA
V
A
A
A
A
V