2SK2315 Hitachi Semiconductor, 2SK2315 Datasheet - Page 2

• Manufacturer Part Number: 2SK2315
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK2315
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note
2
2. When using the alumina ceramic board (12.5
3. Marking is “TY”
1. Pulse Test
10 s, duty cycle
Symbol
V
V
I
V
R
|y
Ciss
Coss
Crss
t
t
GSS
DSS
on
off
(BR)DSS
(BR)GSS
GS(off)
DS(on)
fs
|
1 %
Min
60
—
—
0.5
—
—
1.5
—
—
—
—
—
20
Symbol
V
V
I
I
I
Pch*
Tch
Tstg
Typ
—
—
—
—
—
0.4
0.35
1.8
173
85
23
21
85
D
D(pulse)
DR
DSS
GSS
2
*
1
20
Max
—
—
5
1.5
0.6
0.45
—
—
—
—
—
—
5
0.7mm)
Unit
V
V
V
ns
ns
S
pF
pF
pF
A
A
Ratings
60
2
4
2
1
150
–55 to +150
20
Test Conditions
I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1 MHz
I
V
D
G
D
D
D
D
D
GS
DS
GS
GS
DS
DS
GS
GS
= 10 mA, V
= 100 A, V
= 1 mA, V
= 0.3 A
= 1 A
= 1 A
= 1 A, R
= 16 V, V
= 50 V, V
= 3 V*
= 4 V*
= 10 V*
= 10 V
= 0
= 10 V
1
1
L
1
= 30
Unit
V
V
A
A
A
W
DS
C
C
GS
GS
DS
= 10 V
DS
= 0
= 0
= 0
= 0