2SK2380

Manufacturer Part Number2SK2380
DescriptionSilicon N-Channel Junction FET
ManufacturerPanasonic Semiconductor
2SK2380 datasheet
 


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Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
Features
Low gate to source leakage current, I
Small capacitance of C
, C
, C
iss
oss
SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
Absolute Maximum Ratings
Parameter
Symbol
Gate to Drain voltage
V
Gate to Source voltage
V
Drain current
I
D
Gate current
I
G
Allowable power dissipation
P
D
Channel temperature
T
ch
Storage temperature
T
stg
Electrical Characteristics
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Gate to Source leakage current
I
GSS
Gate to Drain voltage
V
Gate to Source cut-off voltage
V
Forward transfer admittance
| Y
Input capacitance (Common Source)
C
iss
Output capacitance (Common Source)
C
oss
Reverse transfer capacitance (Common Source)
C
rss
*
I
rank classification
DSS
Runk
Q
R
I
(mA)
50 to 100
70 to 130
DSS
Marking Symbol
EBQ
EBR
GSS
rss
(Ta = 25°C)
Ratings
Unit
40
V
GDO
40
V
GSO
±1
mA
10
mA
125
mW
125
°C
55 to +125
°C
(Ta = 25°C)
Conditions
*
V
= 10V, V
= 0
DS
GS
V
= 20V, V
= 0
GS
DS
I
= 10 A, V
= 0
DS
G
DS
V
= 10V, I
= 1 A
GSC
DS
D
|
V
= 10V, V
= 0, f = 1kHz
fs
DS
GS
V
= 10V, V
= 0, f = 1MHz
DS
GS
S
100 to 200
EBS
1.6±0.15
0.4
0.8±0.1
0.4
1
3
2
0.2±0.1
1: Source
2: Drain
EIAJ: SC-75
3: Gate
SS-Mini Type Package (3-pin)
Marking Symbol (Example): EB
min
typ
max
50
200
0.5
40
1.3
3
0.05
1
0.4
0.4
unit: mm
Unit
A
nA
V
V
mS
pF
pF
pF
1

2SK2380 Summary of contents

  • Page 1

    ... Silicon Junction FETs (Small Signal) 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor Features Low gate to source leakage current, I Small capacitance iss oss SS-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. ...

  • Page 2

    ... 240 V =10V DS Ta=25˚C 200 160 I =100 A DSS 120 120 160 200 240 ( A ) Drain current I D 2SK2380 240 V =10V DS 200 160 120 80 40 25˚C Ta=75˚C –25˚C 0 –1.2 – 0.8 – 0 Gate to source voltage ...