2SK2383

Manufacturer Part Number2SK2383
DescriptionSilicon N-Channel Power F-MOS FET
ManufacturerPanasonic Semiconductor
2SK2383 datasheet
 


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Power F-MOS FETs
2SK2383
Silicon N-Channel Power F-MOS FET
Features
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Applications
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
Absolute Maximum Ratings
Parameter
Symbol
Drain to Source breakdown voltage
V
Gate to Source voltage
V
DC
I
D
Drain current
Pulse
I
DP
Avalanche energy capacity
EAS
Allowable power
T
= 25°C
C
P
D
dissipation
Ta = 25°C
Channel temperature
T
ch
Storage temperature
T
stg
*
L = 2mH, I
= 13A, 1 pulse
L
Electrical Characteristics
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Gate to Source leakage current
I
GSS
Drain to Source breakdown voltage
V
Gate threshold voltage
V
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
Diode forward voltage
V
Input capacitance (Common Source)
C
iss
Output capacitance (Common Source)
C
oss
Reverse transfer capacitance (Common Source)
C
rss
Turn-on time (delay time)
t
d(on)
Rise time
t
r
Fall time
t
f
Turn-off time (delay time)
t
d(off)
Thermal resistance between channel and case
R
th(ch-c)
Thermal resistance between channel and atmosphere
R
th(ch-a)
(T
= 25°C)
C
Ratings
Unit
500
V
DSS
±30
V
GSS
±13
A
±26
A
*
170
mJ
100
W
3
150
°C
55 to +150
°C
(T
= 25°C)
C
Conditions
V
= 400V, V
= 0
DS
GS
V
= ±30V, V
= 0
GS
DS
I
= 1mA, V
= 0
DSS
D
GS
V
= 25V, I
= 1mA
th
DS
D
V
= 10V, I
= 7A
GS
D
|
V
= 25V, I
= 7A
fs
DS
D
I
= 13A, V
= 0
DSF
DR
GS
V
= 20V, V
= 0, f = 1MHz
DS
GS
V
= 150V, I
= 7A
DD
D
V
= 10V, R
= 21.4
GS
L
unit: mm
15.5±0.5
3.0±0.3
3.2±0.1
4.0
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
5.45±0.3
1: Gate
1
2
3
2: Drain
3: Source
TOP-3E Package
min
typ
max
Unit
100
A
±1
A
500
V
1
5
V
0.45
0.6
5
8
S
1.7
V
1700
pF
300
pF
120
pF
30
ns
70
ns
90
ns
210
ns
1.25
°C/W
41.67
°C/W
1

2SK2383 Summary of contents

  • Page 1

    ... Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply Absolute Maximum Ratings Parameter Symbol ...

  • Page 2

    ... V =25V DS T =25˚ =0˚C C 25˚C 10 100˚C 8 150˚ Drain current I D 2SK2383 IAS L-load 100 T =25˚ 170mJ 3 1 0.3 0.1 0.1 0 L-load ( =25˚ =26A ...

  • Page 3

    ... Power F-MOS FETs 300 I =13A 250 200 V GS 150 100 Gate charge amount 2SK2383 3 ...