2SK2390 Hitachi Semiconductor, 2SK2390 Datasheet
2SK2390
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2SK2390 Summary of contents
Page 1
... High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline 2SK2390 Silicon N-Channel MOS FET TO-220CFM Gate G 2. Drain 3 ...
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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value ...
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... V — 1.05 — — 95 — rr 2SK2390 Unit Test Conditions mA 100 mA ...
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... Power vs. Temperature Derating Case Temperature Typical Output Characteristics Drain to Source Voltage 4 200 100 0.5 0.2 100 150 200 Tc (°C) 20 Pulse Test 3 2 (V) ...
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... (V) GS vs. Temperature 0 0 120 160 Tc (°C) 2SK2390 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0 0.05 0.02 0. Drain Current I (A) D Forward Transfer Admittance vs. ...
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... Body to Drain Diode Reverse Recovery Time 500 200 100 0.1 0.3 Reverse Drain Current Dynamic Input Characteristics 100 Gate Charge 6 1000 di/ 100 I ( ...
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... – 0.8 1.2 1.6 2.0 V (V) SD Avalanche Test Circuit and Waveform Monitor 2SK2390 Maximun Avalanche Energy vs. Channel Temperature Derating duty < 0 > 100 125 Channel Temperature Tch (°C) V DSS ...
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... 0.5 0.3 0.1 0.03 0.01 10 µ Switching Time Test Circuit Vin Monitor Vin Normalized Transient Thermal Impedance vs. Pulse Width 100 µ Pulse Width PW (S) Vout Monitor D.U. Vin V DD Vout = 30 V td(on 25°C ch – c( (t) • ch – – 6.25 °C/ °C ...
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... Lower Cookham Road München Maidenhead Tel: 089-9 91 80-0 Berkshire SL6 8YA Fax: 089 United Kingdom Tel: 0628-585000 Fax: 0628-778322 2SK2390 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, ...