2SK2390 Hitachi Semiconductor, 2SK2390 Datasheet - Page 7

• Manufacturer Part Number: 2SK2390
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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Vin
15 V
20
16
12
8
4
0
Source to Drain Voltage
Pulse Test
10 V
5 V
Reverse Drain Current vs.
0.4
Souece to Drain Voltage
V
Monitor
50
DS
0.8
Rg
V
1.2
GS
= 0, –5 V
D. U. T
Avalanche Test Circuit and Waveform
V
I
Monitor
1.6
AP
SD
L
(V)
2.0
V
DD
0
V
DD
20
16
12
E
8
4
0
25
AR
I
=
AP
Maximun Avalanche Energy vs.
Channel Temperature Tch (°C)
Channel Temperature Derating
1
2
50
I
• L • I
D
75
AP
2
•
100
V
DSS
I
V
duty < 0.1 %
Rg > 50
AP
V
DD
DSS
V
= 12 A
125
– V
= 25 V
DS
2SK2390
V
DD
(BR)DSS
150
7