2SK656

Manufacturer Part Number2SK656
DescriptionSilicon N-Channel MOS FET
ManufacturerPanasonic Semiconductor
2SK656 datasheet
 
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Silicon MOS FETs (Small Signal)
2SK656
Silicon N-Channel MOS FET
For switching
Features
High-speed switching
Small drive current owing to high input inpedance
High electrostatic breakdown voltage
Absolute Maximum Ratings
Parameter
Symbol
Drain to Source breakdown voltage
V
Gate to Source voltage
V
Drain current
I
D
Max drain current
I
DP
Allowable power dissipation
P
D
Channel temperature
T
ch
Storage temperature
T
stg
Electrical Characteristics
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Gate to Source leakage current
I
GSS
Drain to Source breakdown voltage
V
Gate threshold voltage
V
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
High level output voltage
V
Low level output voltage
V
Input resistance
R
1
Input capacitance (Common Source)
C
iss
Output capacitance (Common Source)
C
oss
Reverse transfer capacitance (Common Source)
C
rss
Turn-on time
t
on
Turn-off time
t
off
* 1
Resistance ratio R
/R
= 1/50
1
2
* 2
Pulse measurement
(Ta = 25°C)
Ratings
Unit
50
V
DSS
8
V
GSO
100
mA
200
mA
200
mW
150
°C
55 to +150
°C
(Ta = 25°C)
Conditions
V
= 10V, V
= 0
DS
GS
V
= 8V, V
= 0
GS
DS
I
= 100 A, V
= 0
DSS
D
GS
I
= 100 A, V
= V
th
D
DS
GS
I
= 20mA, V
= 5V
D
GS
|
I
= 20mA, V
= 5V, f = 1kHz
fs
D
DS
V
= 5V, V
= 1V, R
= 200
OH
DD
GS
L
V
= 5V, V
= 5V, R
= 200
OL
DD
GS
L
* 1
+ R
2
V
= 10V, V
= 0, f = 1MHz
DS
GS
* 2
V
= 5V, V
= 0 to 5V, R
= 200
DD
GS
L
* 2
V
= 5V, V
= 5 to 0V, R
= 200
DD
GS
L
4.0±0.2
marking
1
2
3
1.27
1.27
1: Source
2: Drain
2.54±0.15
3: Gate
EIAJ: SC-72
New S Type Package
Internal Connection
R
1
G
R
2
min
typ
max
10
40
80
50
1.5
3.5
50
20
35
4.5
1
100
200
9
4.5
1.1
1
1
unit: mm
D
S
Unit
A
A
V
V
mS
V
V
k
pF
pF
pF
s
s
1

2SK656 Summary of contents

  • Page 1

    ... Silicon MOS FETs (Small Signal) 2SK656 Silicon N-Channel MOS FET For switching Features High-speed switching Small drive current owing to high input inpedance High electrostatic breakdown voltage Absolute Maximum Ratings Parameter Symbol Drain to Source breakdown voltage V Gate to Source voltage V Drain current I D Max drain current ...

  • Page 2

    ... Drain to source voltage 1000 V =1V O Ta=25˚C 300 100 0.3 0.1 0.1 0 100 ( mA ) Output current I O 2SK656 120 V =5V DS 100 80 Ta=–25˚C 25˚C 60 75˚ Gate to source voltage DS(on) ...