2SJ484 Hitachi Semiconductor, 2SJ484 Datasheet - Page 2

• Manufacturer Part Number: 2SJ484
• Description: Silicon P-Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SJ484
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Notes: 1. PW
2
Storage temperature
2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
100 s, duty cycle
10 %
Symbol
V
V
I
I
I
Pch*
Tch
Tstg
D
D(pulse)
DR
DSS
GSS
2
*
1
Ratings
–30
–2
–4
–2
1
150
–55 to +150
20
Unit
V
V
A
A
A
W
C
C