2SJ484 Hitachi Semiconductor, 2SJ484 Datasheet - Page 4

• Manufacturer Part Number: 2SJ484
• Description: Silicon P-Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SJ484
Main Characteristics
4
2.0
1.5
1.0
0.5
–5
–4
–3
–2
–1
0
0
–10 V –6 V
Test Condition :
Drain to Source Voltage
Ambient Temperature
When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)
Power vs. Temperature Derating
Typical Output Characteristics
–2
50
–4.5 V
–5 V
–4
100
V
–6
GS
Pulse Test
= –2.5 V
Ta ( C)
150
–3.5 V
V
–4 V
–3 V
–8
DS
(V)
–10
200
–0.03
–0.01
–0.3
–0.1
–10
–3
–1
–5
–4
–3
–2
–1
–0.1 –0.3
0
Operation in
this area is
limited by R
Drain to Source Voltage
Gate to Source Voltage
Ta = 25 C
V
Pulse Test
Typical Transfer Characteristics
DS
Maximum Safe Operation Area
Tc = 75 C
–1
= –10 V
–1
DS(on)
–2
–3
–3
–10
100 s
–25 C
25 C
V
V
GS
DS
–4
–30 –100
(V)
(V)
–5