2SJ505 Hitachi Semiconductor, 2SJ505 Datasheet

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2SJ505

Manufacturer Part Number
2SJ505
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Features
Outline
Low on-resistance
R
Low drive current.
4V gate drive devices.
High speed switching.
DS(on)
= 0.017 typ.
2SJ505(L), 2SJ505(S)
G
High Speed Power Switching
Silicon P Channel MOS FET
LDPAK
D
S
1
2
3
4
1
2
Target specification 1st. Edition
1. Gate
2. Drain
3. Source
4. Drain
3
4
ADE-208-547

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2SJ505 Summary of contents

Page 1

... Silicon P Channel MOS FET High Speed Power Switching Features Low on-resistance R = 0.017 typ. DS(on) Low drive current. 4V gate drive devices. High speed switching. Outline G LDPAK ADE-208-547 Target specification 1st. Edition Gate 2. Drain 3. Source 4. Drain ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value ...

Page 3

... DF — 110 — 2SJ505(L), 2SJ505(S) Unit Test Conditions –10mA 100 – 16V, V ...

Page 4

... Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –10 V –100 –4.5 V –5 V –8 V –80 –60 –40 – –4 –8 Drain to Source Voltage 4 –1000 –300 –100 –30 –10 –3 –1 –0.3 –0.1 150 200 – ...

Page 5

... V (V) GS Forward Transfer Admittance vs. 100 30 – – –10,–20A 1 0.3 0.1 –0.1 –0.3 120 160 ( C) 2SJ505(L), 2SJ505(S) vs. Drain Current = – –10 V Pulse Test –100 –300 –1000 –30 –10 Drain Current I (A) D Drain Current Tc = – – Pulse Test – ...

Page 6

... Body to Drain Diode Reverse Recovery Time 1000 500 200 100 –1 –3 –0.1 –0.3 Reverse Drain Current Dynamic Input Characteristics – –25 V –10 V – – – – – ...

Page 7

... V (V) Channel Temperature Tch ( C) SD Avalanche Test Circuit and Waveform Monitor 2SJ505(L), 2SJ505( – – duty < 0 > 100 125 V DSS • L • I • – DSS ...

Page 8

... Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 - – c( (t) • ch – 1.67 C/ Pulse Width PW (S) Vout Vin Monitor 10 –30 V Vout td(on – c ...

Page 9

... Package Dimensions 10.2 0.3 1.2 0.2 1.27 0.2 +0.2 0.86 –0.1 0.76 0.1 2.54 0.5 2.54 0.5 L type 4.44 0.2 1.3 0.2 10.2 0.3 2.59 0.2 1.2 0.2 0.4 0.1 2.54 0.5 2SJ505(L), 2SJ505(S) Unit: mm 4.44 0.2 1.3 0.2 +0.2 0.1 –0.1 2.59 0.2 1.27 0.2 0.4 0.1 +0.2 0.86 –0.1 2.54 0.5 S type LDPAK Hitachi Code — EIAJ JEDEC — 9 ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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