2SJ505 Hitachi Semiconductor, 2SJ505 Datasheet - Page 3

• Manufacturer Part Number: 2SJ505
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltege drain
current
Gate to source leak current
Gate to source cutoff voltage V
Static drain to source on state R
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
Symbol
V
V
I
I
R
|y
Ciss
Coss
t
t
t
t
V
t
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
Min
–60
—
—
–1.0
—
—
27
—
—
—
—
—
—
—
—
—
20
Typ
—
—
—
—
—
0.017
0.024
39
4100
2100
450
32
225
530
330
–1.1
110
Max
—
—
–10
–2.0
0.022
0.036
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
2SJ505(L), 2SJ505(S)
Test Conditions
I
I
V
V
I
I
I
I
V
V
f = 1MHz
V
R
I
I
diF/ dt = 50A/ s
D
G
D
D
D
D
F
F
DS
GS
DS
GS
GS
L
= –50A, V
= –50A, V
= –10mA, V
= 100 A, V
= –1mA, V
= –25A, V
= –25A, V
= 25A, V
= 3
= –60 V, V
= –10V
= 16V, V
= 0
= –10V, I
DS
GS
GS
GS
GS
DS
D
= 10V*
DS
GS
GS
= 0
= 0
= –10A
= –10V*
= –4V*
DS
= –10V
= 0
= 0
= 0
= 0
1
1
1
3