2SJ527L Hitachi Semiconductor, 2SJ527L Datasheet
2SJ527L
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2SJ527L Summary of contents
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Features Low on-resistance R = 0.3 typ. DS(on) Low drive current 4 V gete drive devices High speed switching Outline Silicon P Channel MOS FET High Speed Power Switching DPAK ADE-208-640A (Z) ...
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Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note ...
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Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –10 V –5 –5 V –8 V –6 V –4 –3 –2 –1 0 –2 –4 Drain to Source Voltage –100 –50 ...
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Drain to Source Saturation Voltage vs. Gate to Source Voltage –5 –4 –3 –2 –1 – –8 –4 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 1.2 0.8 ...
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Body–Drain Diode Reverse Recovery Time 100 µ ° –0.1 –0.2 –0.5 –1 –2 Reverse Drain Current Dynamic Input Characteristics –10 ...
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Reverse Drain Current vs. Source to Drain Voltage –5 –4 –10 V –3 –5 V –2 –1 0 –0.4 –0.8 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50 – 2.5 2.0 1.5 ...
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Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U. Vin 50 = –30 V – – c(t) ...
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Package Dimensions 6.5 ± 0.5 5.4 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 L type 8 2.3 ± 0.5 0.55 ± 0.1 6.5 ± 0.5 5.4 ± 0.5 1.15 ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...