2SJ527L Hitachi Semiconductor, 2SJ527L Datasheet - Page 2

• Manufacturer Part Number: 2SJ527L
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SJ527(L),2SJ527(S)
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalenche current
Avalenche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
2
1. PW
2. Value at Tc = 25 C
3. Value at Tch = 25 C, Rg
4. Pulse test
10 s, duty cycle
1 %
Symbol Min
V
V
I
I
V
R
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
50
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
Symbol
V
V
I
I
I
I
E
Pch
Tch
Tstg
D
D(pulse)
DR
AP
DSS
GSS
AR
Note3
Note3
Note2
Note1
–60
—
—
–1.0
—
—
1.8
—
—
—
—
—
—
—
—
—
20
Typ
—
—
—
—
—
0.3
0.5
3
220
110
35
10
30
45
35
–1.35
55
Max
—
—
–10
–2.0
0.4
0.8
—
—
—
—
—
—
—
—
—
—
Ratings
–60
–5
–20
–5
–5
2.1
20
150
–55 to +150
10
20
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
I
I
I
I
V
V
f = 1MHz
V
R
I
I
diF/ dt = 50A/ s
D
G
D
D
D
D
F
F
DS
GS
DS
GS
GS
L
= –5A, V
= –5A, V
= –10mA, V
= 100 A, V
= –1mA, V
= –3A, V
= –3A, V
= –3A, V
= 10
= –60 V, V
= 16V, V
= –10V
= 0
= –10V, I
Unit
V
V
A
A
A
A
mJ
W
C
C
GS
GS
GS
GS
DS
DS
D
= 0
= 0
= –10V
= –10V
= –4V
DS
GS
GS
= –3A
DS
= –10V
= 0
= 0
= 0
= 0
Note4
Note4
Note4