2SJ551 Hitachi Semiconductor, 2SJ551 Datasheet

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2SJ551

Manufacturer Part Number
2SJ551
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ551L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SJ551S
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Features
Outline
Low on-resistance
R
Low drive current.
4V gate drive devices.
High speed switching.
DS(on)
= 0.050 typ.
G
2SJ551(L),2SJ551(S)
LDPAK
High Speed Power Switching
Silicon P Channel MOS FET
D
S
1
2
3
4
1
2
1. Gate
2. Drain
3. Source
4. Drain
3
4
ADE-208-647B (Z)
3rd. Edition
Jun 1998

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2SJ551 Summary of contents

Page 1

... Features Low on-resistance R = 0.050 typ. DS(on) Low drive current. 4V gate drive devices. High speed switching. Outline LDPAK G Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B ( Gate 2. Drain 3. Source 4. Drain 3rd. Edition Jun 1998 ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

Page 3

... Tc (°C) –20 Pulse Test –16 –3 V –12 –8 –2.5 V – – –6 –8 –10 V (V) DS 2SJ551(L),2SJ551(S) Maximum Safe Operation Area 10 µs Operation in this area is limited by R DS(on ° 0 Drain to Source Voltage V DS Typical Transfer Characteristics V = – Pulse Test 25° ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage –3.0 –2.5 –2.0 –1.5 –1.0 –0.5 0 –4 –8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.30 Pulse Test 0.25 0.20 0. –4 V 0.10 GS 0.05 – – Case Temperature 4 Pulse Test I = – 0.05 –10 A 0.02 – ...

Page 5

... µs, duty < 500 –4 200 –8 100 –12 50 –16 20 – –0.1 –0.2 2SJ551(L),2SJ551(S) Typical Capacitance vs. Drain to Source Voltage MHz Ciss Coss Crss –10 –20 –30 –40 –50 (V) DS Switching Characteristics = – –30 V ...

Page 6

... Reverse Drain Current vs. Source to Drain Voltage –20 –10 V –16 –5 V –12 –8 –4 0 –0.4 –0.8 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50 – Pulse Test 0 –1.2 –1.6 –2 ( Monitor D ...

Page 7

... Vin Monitor D.U.T. Vin 50 – – c( (t) • ch – 2.08 °C/ ° 100 m Pulse Width PW (S) Vout Vin Monitor –30 V Vout td(on) 2SJ551(L),2SJ551( 25°C ch – Waveform 10% 90% 90% 90% 10% 10% td(off ...

Page 8

... Package Dimensions 10.2 ± 0.3 1.27 ± 0.2 1.2 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 8 4.44 ± 0.2 1.3 ± 0.2 10.2 ± 0.3 2.59 ± 0.2 1.2 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 4.44 ± 0.2 1.3 ± 0.2 +0.2 0.1 –0.1 2.59 ± 0.2 1.27 ± 0.2 0.4 ± 0.1 +0.2 0.86 –0.1 2.54 ± 0.5 S type LDPAK Hitachi Code EIAJ JEDEC Unit: mm — — ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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