2SJ551 Hitachi Semiconductor, 2SJ551 Datasheet - Page 2

• Manufacturer Part Number: 2SJ551
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SJ551(L),2SJ551(S)
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
Note:
2
1. PW
2. Value at Tc = 25 C
3. Value at Tch = 25 C, Rg
4. Pulse test
10 s, duty cycle
Symbol Min
I
I
V
R
R
|y
Ciss
Coss
Crss
t
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
rr
1 %
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DS(on)
DF
fs
|
50
Symbol
V
V
I
I
I
E
Pch
Tch
Tstg
D
D(pulse)
DR
AP
DSS
GSS
AR
Note3
Note3
Note2
–60
—
—
–1.0
—
—
10
—
—
—
—
—
—
—
—
—
Note1
20
Typ
—
—
—
—
—
0.050
0.070
16
1300
650
180
14
95
190
135
–1.0
70
Max
—
—
–10
–2.0
0.065
0.110
—
—
—
—
—
—
—
—
—
—
Ratings
–60
–18
–72
–18
–18
27
60
150
–55 to +150
10
20
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
I
I
I
I
V
V
f = 1MHz
V
R
I
I
diF/ dt =50A/ s
D
G
D
D
D
D
F
F
DS
GS
DS
GS
GS
L
= –18A, V
= –18A, V
= –10mA, V
= 100 A, V
= –1mA, V
= –9A, V
= –9A, V
= –9A, V
=3.33
= –60 V, V
= 16V, V
= –10V
= 0
= –10V, I
Unit
V
V
A
A
A
A
mJ
W
C
C
GS
GS
DS
GS
GS
DS
D
= –10V
= –4V
= -10V
DS
GS
GS
= 0
= 0
DS
= –9A
= –10V
= 0
= 0
= 0
= 0
Note4
Note4
Note4