2SJ555 Hitachi Semiconductor, 2SJ555 Datasheet

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2SJ555

Manufacturer Part Number
2SJ555
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ555
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Features
Outline
Low on-resistance
R
Low drive current.
4V gate drive devices.
High speed switching.
DS(on)
= 0.017 typ.
G
High Speed Power Switching
TO–3P
Silicon P Channel MOS FET
D
S
2SJ555
1
2
3
1. Gate
2. Drain
3. Source
(Flange)
ADE-208-634A (Z)
2nd. Edition
Jun 1998

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2SJ555 Summary of contents

Page 1

... Features Low on-resistance R = 0.017 typ. DS(on) Low drive current. 4V gate drive devices. High speed switching. Outline G 2SJ555 Silicon P Channel MOS FET High Speed Power Switching TO– ADE-208-634A (Z) 2nd. Edition Jun 1998 1. Gate 2. Drain (Flange) 3. Source ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

Page 3

... Maximum Safe Operation Area Operation in this area is limited by R DS(on °C –1 –3 –10 –30 Drain to Source Voltage V DS Typical Transfer Characteristics 25 ° – Pulse Test 75 ° –25 °C 0 –1 –2 –3 –4 Gate to Source Voltage V GS 2SJ555 –100 (V) –5 (V) 3 ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage –2 –1.6 –1.2 –0.8 –0.4 – –4 –8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test – – – Case Temperature 4 Pulse Test I = – ...

Page 5

... V DS 500 –4 200 –8 100 –12 = – –25 V –10 V – –20 320 –0.1 –0.3 400 2SJ555 Typical Capacitance vs. Drain to Source Voltage MHz Ciss Coss Crss –10 –20 –30 –40 –50 (V) DS Switching Characteristics t d(off ...

Page 6

... Reverse Drain Current vs. Source to Drain Voltage –100 –80 –60 –5 V –10 V –40 –20 0 –0.4 –0.8 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50 – 500 Pulse Test 400 300 200 100 0 –1.2 –1.6 –2 ( Monitor D ...

Page 7

... Switching Time Test Circuit Vin Monitor D.U. Vin 50 = – – c( (t) • ch – 1.0 °C/ ° Pulse Width PW (S) Vout Vin Monitor 10% DD Vout td(on) 2SJ555 Tc = 25°C ch – 100 m 1 Waveform 90% 90% 90% 10% 10% td(off ...

Page 8

... Package Dimensions 16.0 max 1.6 typ 1.4 max 2.0 typ 3.6 typ 0.9 typ 1.0 typ 5.45 ± 0.2 5.45 ± 0.2 8 3.2 ± 0.2 1.0 ± 0.2 5.0 max 1.5 typ 2.8 typ 0.6 ± 0.2 TO–3P Hitachi Code EIAJ SC–65 — JEDEC Unit: mm ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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