2SJ555 Hitachi Semiconductor, 2SJ555 Datasheet - Page 3

• Manufacturer Part Number: 2SJ555
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
–100
200
150
100
–80
–60
–40
–20
50
–10 V
0
0
Drain to Source Voltage
Power vs. Temperature Derating
Case Temperature
Typical Output Characteristics
–4
50
–8 V
–5 V
–4.5 V
–8
100
V
GS
–12
–3.5 V
Tc (°C)
–4 V
–3 V
= –2.5 V
Pulse Test
150
V
–16
DS
(V)
–20
200
–1000
–300
–100
–100
–0.3
–0.1
–30
–10
–80
–60
–40
–20
–3
–1
–0.1 –0.3
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25 °C
V
Pulse Test
DS
Typical Transfer Characteristics
Maximum Safe Operation Area
Operation in
this area is
limited by R
–1
= –10 V
75 °C
–1
–2
DS(on)
–3
–3
25 °C
–10
Tc = –25 °C
V
V
GS
DS
–4
–30
(V)
(V)
2SJ555
–100
–5
3