FLL400IP-2 Eudyna Devices, FLL400IP-2 Datasheet

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FLL400IP-2

Manufacturer Part Number
FLL400IP-2
Description
L-Band Medium & High Power GaAs FET
Manufacturer
Eudyna Devices
Datasheet
1.FLL400IP-2.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FLL400IP-2
Manufacturer:
Eudyna
Quantity:
5 000
CASE STYLE: IP
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25 C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
DESCRIPTION
The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• PCS/PCN Communication Systems.
Edition 1.6
December 1999
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 C)
FEATURES
• Push-Pull Configuration
• High Power Output: 35W (Typ.)
• High PAE: 44% (Typ.)
• Broad Frequency Range: 800 to 2000 MHz.
• Suitable for class A operation at 10V
Thermal Resistance
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
and class AB operation at 12V
1. The drain-source operating voltage (V DS ) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
3. The operating channel temperature (T ch ) should not exceed 145 C.
gate resistance of 25
Parameter
Item
Symbol
Symbol
V
V
T
T
P
V
G
G
GS
stg
P
P
DS
I
I
ch
R
T
DSS
gm
DSR
V
GSO
1dB
add
1dB
1dB
1dB
th
p
Channel to Case
V
V
V
I
V
f=1.96GHz
I
V
f=1.96GHz
I
L-Band Medium & High Power GaAs FET
GS
DS
DS
DS
DS
DS
DS
DS
1
= 2A
= 2A
= -720 A
Tc = 25 C
Condition
= 5V, V
= 5V, I
= 5V, I
= 12V
= 10V
Conditions
DS
DS
GS
=7.2A
=720mA
=0V
Min.
44.5
-65 to +175
-1.0
9.0
-5
-
-
-
-
-
-
-
Rating
+175
107
15
-5
Limits
FLL400IP-2
6000
Typ.
45.5
10.0
44.5
10.0
-2.0
6.0
1.0
12
44
-
G.C.P.: Gain Compression Point
Max.
-3.5
8.0
1.4
16
-
-
-
-
-
-
-
www.DataSheet4U.com
Unit
W
V
V
C
C
Unit
dBm
dBm
mS
C/W
dB
dB
%
A
V
V
A

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FLL400IP-2 Summary of contents

Page 1

... Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers ...

Page 2

... FLL400IP-2 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 120 100 100 Case Temperature ( OUTPUT POWER & add vs. INPUT POWER 12V 1.96GHz ...

Page 3

... OUTPUT POWER vs. IMD -20 - 10V - - 1.96GHz - +5MHz -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 - Total Output Power (dBm) FLL400IP-2 IM3 IM5 IM3 IM5 www.DataSheet4U.com 44 43 ...

Page 4

... FLL400IP-2 L-Band Medium & High Power GaAs FET 45 6 2-R1.3 0.2 (0.051) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive ...

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