FLL400IP-2 Eudyna Devices, FLL400IP-2 Datasheet - Page 4

• Manufacturer Part Number: FLL400IP-2
• Description: L-Band Medium & High Power GaAs FET
• Manufacturer: Eudyna Devices

FLL400IP-2
L-Band Medium & High Power GaAs FET
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0799M200
2-R1.3 0.2
6
(0.051)
45
Metal-Ceramic Hermetic Package
13.8 0.2
18.6 0.2
(0.197)
(0.523)
(0.866)
(0.543)
22 0.2
(0.732)
1
5
13.3
5
4
2
(0.039)
(0.055)
2-1.4
2-1
Case Style "IP"
3
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
4
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
• Observe government laws and company regulations when discarding this
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
(0.039)
0.1
1, 2: Gate
3, 6: Source
4, 5: Drain
Unit: mm (inches)
+0.05
-0.01
CAUTION
(0.094)
2.4
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