FLL410IK-3C Eudyna Devices, FLL410IK-3C Datasheet - Page 6

• Manufacturer Part Number: FLL410IK-3C
• Description: L-Band High Power GaAs FET
• Manufacturer: Eudyna Devices

L-Band High Power GaAs FET
FLL410IK-3C
For further information please contact :
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
TEL: [phone]
FAX: [phone]
FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD.
HONG KONG BRANCH
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
FUJITSU QUANTUM DEVICES LTD.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL: [phone]
FAX: [phone]
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
Hachioji Daiichi-Seimei Bldg., 11
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: [phone]
FAX: [phone]
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2004 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A.
th
Floor
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
・Observe government laws and company regulations when
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
6
CAUTION
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