SPA11N60C2 Infineon Technologies, SPA11N60C2 Datasheet

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SPA11N60C2

Manufacturer Part Number
SPA11N60C2
Description
Power Transistor
Manufacturer
Infineon Technologies
Datasheet

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SPA11N60C2
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SPA11N60C2
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Cool MOS™ Power Transistor
Feature
Type
SPP11N60C2
SPB11N60C2
SPA11N60C2
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Reverse diode d v /d t
I
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
D
D
S
C
C
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
=5.5A, V
=11A, V
= 11 A, V
= 25 °C
= 100 °C
DD
DD
DS
=50V
=50V
< V
DD
, d i /d t =100A/ s, T
T
Package
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31 Q67040-S4332
C
= 25°C
p
limited by T
AR
AR
jmax
limited by T
limited by T
jmax
Ordering Code
Q67040-S4295
Q67040-S4298
=150°C
Final data
Page 1
jmax
jmax
2)
P-TO220-3-31
P-TO220-3-31
T
Symbol
I
I
E
E
I
d v /d t
V
V
P
Marking
11N60C2
11N60C2
11N60C2
D
D puls
AR
j ,
SPP11N60C2, SPB11N60C2
AS
AR
GS
GS
tot
T
1
2
stg
3
Product Summary
V
R
I
P-TO263-3-2
D
DS
DS(on)
SPP_B
340
±20
125
@ T
0.6
11
22
11
30
6
7
-55...+150
jmax
Value
SPA11N60C2
P-TO220-3-1
SPA
11
340
±20
0.6
7
2002-08-12
22
11
33
0.38
30
6
1)
650
1)
11
Unit
A
A
mJ
A
V/ns
V
W
°C
V
A

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SPA11N60C2 Summary of contents

Page 1

... Operating and storage temperature Final data P-TO220-3-31 Ordering Code Q67040-S4295 Q67040-S4298 limited jmax 2) limited jmax limited jmax =150°C jmax Page 1 SPP11N60C2, SPB11N60C2 SPA11N60C2 Product Summary jmax R DS(on P-TO263-3 P-TO220-3-31 Marking 11N60C2 11N60C2 11N60C2 Symbol Value ...

Page 2

... Gate input resistance MHz, open drain Final data Symbol R thJC R thJC_FP R thJA R thJA_FP R thJA T sold = 25 °C, unless otherwise specified j V (BR)DSS V (BR) GS(th) I DSS I GSS R DS(on Page 2 SPP11N60C2, SPB11N60C2 SPA11N60C2 Values min. typ. max 3 0. 260 600 - - - ...

Page 3

... R =6 =125° d(off =350V, I =11A =350V, I =11A 10V =350V, I =11A DD D (plateau) Page 3 SPP11N60C2, SPB11N60C2 SPA11N60C2 Values min. typ. max 1460 - 610 - =0/13V 13 *f. AV ...

Page 4

... Symbol SPA 0.015 K/W C th1 0.03 C th2 0.043 C th3 0.119 C th4 0.35 C th5 2.499 C th6 th1 th th1 th2 th,n Page 4 SPP11N60C2, SPB11N60C2 SPA11N60C2 Values min. typ 650 = 7 600 Value SPP_B SPA 0.0002121 0.00012 0.0007091 0.000455 0.001184 0.000638 0.001527 ...

Page 5

... W °C 100 120 160 Safe operating area FullPAK parameter Page 5 SPP11N60C2, SPB11N60C2 SPA11N60C2 ) 100 ) DS = 25° 0.001 0. 0 ...

Page 6

... D = 0.01 10 single pulse Typ. output characteristic parameter: t 20V A 12V 10V Page 6 SPP11N60C2, SPB11N60C2 SPA11N60C2 = =150° µ ...

Page 7

... Typ. gate charge DS(on)max GS parameter Page 7 SPP11N60C2, SPB11N60C2 SPA11N60C2 = SPP11N60C2 1 98% typ 0 -60 - 100 ) Gate = 11 A pulsed D SPP11N60C2 0,2 DS max ...

Page 8

... 2 Typ. switching losses =125° =11 A par mWs Page 8 SPP11N60C2, SPB11N60C2 SPA11N60C2 ), inductive load, T =125° =380V, V =0/+13V d(on ...

Page 9

... Final data 18 Avalanche SOA =125° =11A par off Drain-source breakdown voltage V (BR)DSS 120 °C 160 T j Page 9 SPP11N60C2, SPB11N60C2 SPA11N60C2 ) AR 150 ° =125°C j (START ...

Page 10

... Final data 22 Typ. capacitances parameter 400 V 600 V DS Page 10 SPP11N60C2, SPB11N60C2 SPA11N60C2 ) DS =0V, f=1 MHz GS C iss C oss C rss 100 200 300 400 2002-08-12 V 600 V DS ...

Page 11

... Definition of diodes switching characteristics SPP11N60C2, SPB11N60C2 Final data Page 11 SPA11N60C2 2002-08-12 ...

Page 12

... All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 2 P-TO-263-3-1 (D -PAK) 10 ±0.2 A 0...0.3 1) 8.5 0...0.15 0.75 ±0.1 1.05 2.54 5.08 0.25 1) Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9 Final data B 4.44 1.27 ±0.13 0.05 0.5 2. 4.4 1.27 ±0.1 B 0.1 0.05 2.4 ˚ 8 MAX 0.1 M Page 12 SPP11N60C2, SPB11N60C2 SPA11N60C2 ±0.1 ±0.2 B 2002-08-12 ...

Page 13

... P-TO-220-3-31 (FullPAK) 10.5 ±0.005 6.1 ±0.002 1.5 ±0.001 +0.003 1.28 -0.002 +0.003 0.7 -0.002 2.54 Please refer to mounting instructions (application note AN-TO220-3-31-01) SPP11N60C2, SPB11N60C2 Final data 4.7 ±0.005 2.7 ±0.005 +0.005 0.5 -0.002 2.57 ±0.002 Page 13 SPA11N60C2 2002-08-12 ...

Page 14

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SPP11N60C2, SPB11N60C2 Final data Page 14 SPA11N60C2 2002-08-12 ...

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