SPA11N60C2

Manufacturer Part NumberSPA11N60C2
DescriptionPower Transistor
ManufacturerInfineon Technologies
SPA11N60C2 datasheet
 


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Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Type
Package
SPP11N60C2
P-TO220-3-1
SPB11N60C2
P-TO263-3-2
SPA11N60C2
P-TO220-3-31 Q67040-S4332
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, t
Avalanche energy, single pulse
I
=5.5A, V
=50V
D
DD
Avalanche energy, repetitive t
I
=11A, V
=50V
D
DD
Avalanche current, repetitive t
Reverse diode d v /d t
I
= 11 A, V
< V
, d i /d t =100A/ s, T
S
DS
DD
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
= 25°C
C
Operating and storage temperature
Final data
P-TO220-3-31
Ordering Code
Q67040-S4295
Q67040-S4298
limited by T
p
jmax
2)
limited by T
AR
jmax
limited by T
AR
jmax
=150°C
jmax
Page 1
SPP11N60C2, SPB11N60C2
SPA11N60C2
Product Summary
V
@ T
DS
jmax
R
DS(on)
I
D
P-TO263-3-2
3
2
1
P-TO220-3-31
Marking
11N60C2
11N60C2
11N60C2
Symbol
Value
SPP_B
I
D
11
7
I
22
D puls
E
340
AS
E
0.6
AR
I
11
AR
d v /d t
6
V
±20
GS
V
30
GS
P
125
tot
T
T
-55...+150
j ,
stg
650
V
0.38
11
A
P-TO220-3-1
Unit
SPA
A
1)
11
1)
7
22
A
340
mJ
0.6
11
A
6
V/ns
±20
V
30
33
W
°C
2002-08-12

SPA11N60C2 Summary of contents

  • Page 1

    ... Operating and storage temperature Final data P-TO220-3-31 Ordering Code Q67040-S4295 Q67040-S4298 limited jmax 2) limited jmax limited jmax =150°C jmax Page 1 SPP11N60C2, SPB11N60C2 SPA11N60C2 Product Summary jmax R DS(on P-TO263-3 P-TO220-3-31 Marking 11N60C2 11N60C2 11N60C2 Symbol Value ...

  • Page 2

    ... Gate input resistance MHz, open drain Final data Symbol R thJC R thJC_FP R thJA R thJA_FP R thJA T sold = 25 °C, unless otherwise specified j V (BR)DSS V (BR) GS(th) I DSS I GSS R DS(on Page 2 SPP11N60C2, SPB11N60C2 SPA11N60C2 Values min. typ. max 3 0. 260 600 - - - ...

  • Page 3

    ... R =6 =125° d(off =350V, I =11A =350V, I =11A 10V =350V, I =11A DD D (plateau) Page 3 SPP11N60C2, SPB11N60C2 SPA11N60C2 Values min. typ. max 1460 - 610 - =0/13V 13 *f. AV ...

  • Page 4

    ... Symbol SPA 0.015 K/W C th1 0.03 C th2 0.043 C th3 0.119 C th4 0.35 C th5 2.499 C th6 th1 th th1 th2 th,n Page 4 SPP11N60C2, SPB11N60C2 SPA11N60C2 Values min. typ 650 = 7 600 Value SPP_B SPA 0.0002121 0.00012 0.0007091 0.000455 0.001184 0.000638 0.001527 ...

  • Page 5

    ... W °C 100 120 160 Safe operating area FullPAK parameter Page 5 SPP11N60C2, SPB11N60C2 SPA11N60C2 ) 100 ) DS = 25° 0.001 0. 0 ...

  • Page 6

    ... D = 0.01 10 single pulse Typ. output characteristic parameter: t 20V A 12V 10V Page 6 SPP11N60C2, SPB11N60C2 SPA11N60C2 = =150° µ ...

  • Page 7

    ... Typ. gate charge DS(on)max GS parameter Page 7 SPP11N60C2, SPB11N60C2 SPA11N60C2 = SPP11N60C2 1 98% typ 0 -60 - 100 ) Gate = 11 A pulsed D SPP11N60C2 0,2 DS max ...

  • Page 8

    ... 2 Typ. switching losses =125° =11 A par mWs Page 8 SPP11N60C2, SPB11N60C2 SPA11N60C2 ), inductive load, T =125° =380V, V =0/+13V d(on ...

  • Page 9

    ... Final data 18 Avalanche SOA =125° =11A par off Drain-source breakdown voltage V (BR)DSS 120 °C 160 T j Page 9 SPP11N60C2, SPB11N60C2 SPA11N60C2 ) AR 150 ° =125°C j (START ...

  • Page 10

    ... Final data 22 Typ. capacitances parameter 400 V 600 V DS Page 10 SPP11N60C2, SPB11N60C2 SPA11N60C2 ) DS =0V, f=1 MHz GS C iss C oss C rss 100 200 300 400 2002-08-12 V 600 V DS ...

  • Page 11

    ... Definition of diodes switching characteristics SPP11N60C2, SPB11N60C2 Final data Page 11 SPA11N60C2 2002-08-12 ...

  • Page 12

    ... All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 2 P-TO-263-3-1 (D -PAK) 10 ±0.2 A 0...0.3 1) 8.5 0...0.15 0.75 ±0.1 1.05 2.54 5.08 0.25 1) Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9 Final data B 4.44 1.27 ±0.13 0.05 0.5 2. 4.4 1.27 ±0.1 B 0.1 0.05 2.4 ˚ 8 MAX 0.1 M Page 12 SPP11N60C2, SPB11N60C2 SPA11N60C2 ±0.1 ±0.2 B 2002-08-12 ...

  • Page 13

    ... P-TO-220-3-31 (FullPAK) 10.5 ±0.005 6.1 ±0.002 1.5 ±0.001 +0.003 1.28 -0.002 +0.003 0.7 -0.002 2.54 Please refer to mounting instructions (application note AN-TO220-3-31-01) SPP11N60C2, SPB11N60C2 Final data 4.7 ±0.005 2.7 ±0.005 +0.005 0.5 -0.002 2.57 ±0.002 Page 13 SPA11N60C2 2002-08-12 ...

  • Page 14

    ... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SPP11N60C2, SPB11N60C2 Final data Page 14 SPA11N60C2 2002-08-12 ...