SPA11N60C2 Infineon Technologies, SPA11N60C2 Datasheet - Page 7

• Manufacturer Part Number: SPA11N60C2
• Description: Power Transistor
• Manufacturer: Infineon Technologies

9 Typ. drain-source on resistance
R
parameter: T
11 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
0.5
A
32
24
20
16
12
2
1
0
8
4
0
0
0
=f(I
GS
2
D
); V
)
p
j
25 °C
150 °C
=150°C, V
4
= 10 µs
4
DS
6
2 x I
8
8
D
GS
10
x R
12
DS(on)max
12
14
V
20V
12V
10V
9V
8V
7V
6V
A
I
D
V
GS
Final data
18
20
Page 7
10 Drain-source on-state resistance
R
parameter : I
12 Typ. gate charge
V
parameter: I
DS(on)
GS
2.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
1
0
8
6
4
2
0
-60
0
SPP11N60C2
SPP11N60C2
= f (T
SPP11N60C2, SPB11N60C2
Gate
10
-20
D
D
j
)
= 11 A pulsed
= 7 A, V
)
20
20
98%
30
typ
0,2
GS
60
V
= 10 V
DS max
SPA11N60C2
40
100
2002-08-12
0,8 V
50
°C
DS max
nC
T
Q
j
Gate
180
65