SPA11N60C2 Infineon Technologies, SPA11N60C2 Datasheet - Page 2

• Manufacturer Part Number: SPA11N60C2
• Description: Power Transistor
• Manufacturer: Infineon Technologies

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thremal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm
Linear derating factor
Linear derating factor, FullPAK
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T
Static Characteristics
Drain-source breakdown voltage
V
Drain-source avalanche breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Gate input resistance
f = 1 MHz, open drain
D
GS
GS
DS
DS
GS
GS
=0.5mA
=0V, I
=0V, I
=20V, V
=10V, I
= 600 V, V
= 600 V, V
2
D
D
cooling area
D
=0.25mA
=11A
DS
=7A, T
=0V
GS
GS
= 0 V, T
= 0 V, T
j
=25°C
3)
j
j
= 25 °C
= 150 °C
GS
= V
j
DS
= 25 °C, unless otherwise specified
Final data
Page 2
T
V
V
V
I
I
R
R
Symbol
R
R
R
R
R
DSS
GSS
sold
(BR)DSS
(BR)DS
GS(th)
DS(on)
G
thJC
thJC_FP
thJA
thJA_FP
thJA
SPP11N60C2, SPB11N60C2
min.
600
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.34
0.86
typ.
700
4.5
35
-
-
-
-
-
-
-
-
-
-
-
-
SPA11N60C2
max.
0.26
0.38
250
260
100
5.5
3.8
25
62
80
62
2002-08-12
1
1
-
-
-
-
W/K
°C
V
µA
nA
Unit
K/W