HAF1001 Hitachi Semiconductor, HAF1001 Datasheet

no-image

HAF1001

Manufacturer Part Number
HAF1001
Description
Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability
Manufacturer
Hitachi Semiconductor
Datasheet
Features
operation to shut–down the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
Outline
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
Logic level operation (–4 to –6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Power Switching / Over Temperature Shut–down Capability
TO–220AB
G
Tempe–
rature
Sencing
Circuit
Silicon P Channel MOS FET Series
Gate resistor
Latch
Circuit
Gate
Shut–
down
Circuit
HAF1001
S
D
1
2
3
4
ADE-208-583 A (Z)
1. Gate
2. Drain
3. Source
4. Drain
October 1997
2nd Edition

Related parts for HAF1001

HAF1001 Summary of contents

Page 1

... Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline TO–220AB Gate resistor G Latch Tempe– rature Circuit Sencing Circuit HAF1001 D Gate Shut– down Circuit 1 S ADE-208-583 A (Z) 2nd Edition October 1997 4 1. Gate 2 ...

Page 2

... HAF1001 Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Typical Operation Characteristics ...

Page 3

... D — — s — s — –15A — –15A diF/ dt =50A/ s — –5V — –5V HAF1001 = – – –10V DS Note3 = –4V GS Note3 Note3 = – ...

Page 4

... HAF1001 Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –50 –10 V –40 –30 –20 –10 0 –2 –4 Drain to Source Voltage 4 –500 –200 –100 –50 –20 –10 –5 –2 –1 –0.5 –0.3 150 200 Tc (°C) –20 – ...

Page 5

... V (V) GS Forward Transfer Admittance vs – – –2, – 0.5 120 160 –0.1 –0.2 –0.5 –1 (°C) HAF1001 vs. Drain Current V = – –10 V –2 –5 –10 –20 –50 Drain Current I (A) D Drain Current V = – Pulse Test Tc = –25 °C 25 ° ...

Page 6

... HAF1001 Body–Drain Diode Reverse Recovery Time 500 200 100 µ ° –0.1 –0.2 –0.5 –1 –2 Reverse Drain Current Reverse Drain Current vs. Souece to Drain Voltage –20 Pulse Test –16 – – –8 –4 0 – ...

Page 7

... Gate to Source Voltage Pw (S) ch – c( (t) • ch – 2.50 °C/ ° 100 m Pulse Width PW (S) HAF1001 Gate to Source Voltage I = – –2 –4 –6 –8 – 25°C ch – ...

Page 8

... HAF1001 Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 – Vout Vin Monitor –30 V Vout td(on) Waveform 10% 90% 90% 90% 10% 10% td(off ...

Page 9

... Package Dimensions 11.5 max 9.8 max 7.6 min 1.5 max 0.76 ±0.1 2.5 ±0.5 5.1 ±0.5 + 0.1 4.8 max f 3.6 – 0.08 1.5 max 0.5 2.7 max HAF1001 Unit: mm Hitachi Code TO–220AB SC–46 EIAJ — JEDEC 9 ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

Related keywords