HAF1001 Hitachi Semiconductor, HAF1001 Datasheet - Page 3

• Manufacturer Part Number: HAF1001
• Description: Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25 C)
Item
Drain current
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Over load shut down
operation time
Note:
3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
Note4
Symbol
I
I
V
V
V
I
I
I
I
I
I
R
R
|y
Coss
t
t
t
t
V
t
t
t
D1
D2
GSS+1
GSS+2
GSS+3
GSS–
GS(op)1
GS(op)1
DSS
d(on)
r
d(off)
f
rr
os1
os2
(BR)DSS
(BR)GSS+
(BR)GSS–
GS(off)
DS(on)
DS(on)
DF
fs
|
Min
–7
—
–60
–16
3
—
—
—
—
—
—
—
–1.1
—
—
5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
100
70
10
610
7.5
36
32
29
–1.0
200
3.7
1
Max
—
–10
—
—
—
–100
–50
–1
100
—
—
–250
–2.25
130
90
—
—
—
—
—
—
—
—
—
—
Unit
A
mA
V
V
V
mA
mA
V
m
m
S
pF
V
ns
ms
ms
A
A
A
A
A
s
s
s
s
Test Conditions
V
V
I
I
I
V
V
V
V
V
V
V
I
I
I
V
I
V
f = 1 MHz
I
R
I
I
diF/ dt =50A/ s
V
V
D
G
G
D
D
D
D
D
F
F
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
L
GS
GS
= –15A, V
= –15A, V
= –10mA, V
= –100 A, V
= 100 A, V
= –1mA, V
= –7.5A, V
= –7.5A
= –7.5A, V
= –7.5A, V
= 4
= –3.5V, V
= –1.2V, V
= –8V, V
= –3.5V, V
= –1.2V, V
= 2.4V, V
= –8V, V
= –3.5V, V
= –50 V, V
= –10V
= –10V , V
= –5V, V
= –5V, V
HAF1001
Note3
GS
GS
DS
DS
DD
DD
DS
GS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DS
GS
GS
= 0
= 0
DS
= 0
= 0
= –12V
= –24V
= –10V
= –4V
= –10V
= –5V
= 0
= 0
= 0
= –2V
= –2V
= 0
= 0
= 0
= 0
= 0
= 0
Note3
Note3
3