MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 13

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Figure 5:
Table 3:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Cycle
First
Second
Third
Fourth
Cache register
Data register
1,024 blocks
per device
Array Addressing: MT29F1G16 (x16)
I/O[15:8]
Array Organization for MT29F1G16 (x16)
LOW
LOW
LOW
LOW
Notes: 1. Block address concatenated with page address = actual page address. CAx = column
BA15
LOW
I/O7
CA7
BA7
2. I/O[15:8] are not used during addressing sequence and should be driven LOW.
3. Note that the 11-bit column address is capable of addressing from 0 to 2,047 words on a
address; PAx = page address; BAx = block address.
x16 device; however, only words 0 through 1,055 are valid. Words 1,056 through 2,047 of
each page are “out of bounds,” do not exist in the device, and cannot be addressed.
BA14
LOW
I/O6
CA6
BA6
1,024
1,024
1 block
1,056 words
BA13
LOW
I/O5
CA5
PA5
13
32
32
BA12
LOW
I/O4
CA4
PA4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x8, x16 NAND Flash Memory
1 page
1 block
1 device = (1K + 32) words x 64 pages
I/O 15
BA11
LOW
I/O3
CA3
PA3
I/O 0
= (1K + 32) words
= (1K + 32) words x 64 pages
= (64K + 2K) words
= 1,056 Mbits
x 1,024 blocks
CA10
BA10
I/O2
CA2
PA2
©2006 Micron Technology, Inc. All rights reserved.
I/O1
CA1
CA9
BA9
PA1
Addressing
I/O0
CA0
CA8
BA8
PA0