MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 57

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Figure 46:
Figure 47:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
R/B#
I/Ox
CE#
RE#
WE#
ALE
I/Ox
CE#
CLE
INPUT DATA LATCH Cycle
SERIAL ACCESS Cycle after READ
t CEA
Note:
Note:
t RR
t REA
D
Transition is measured ±200mV from steady-state voltage with load.
This parameter is sampled and not 100 percent tested.
t RP
IN
t WP
t ALS
D
Final = 2,112 (x8) or 1,056 (x16).
t DS
t RC
OUT
D
IN
t WC
0
t DH
t REH
t WH
t REA
t WP
t DS
D
D
OUT
57
IN
t RHZ
1
t DH
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t REA
t WP
1Gb: x8, x16 NAND Flash Memory
1
D
t DS
IN
Final
t COH
D
t DH
t CLH
t CH
OUT
t RHOH
1
t RHZ
t CHZ
1
1
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Timing Diagrams
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Don‘t Care