MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 56

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MT29F1G08ABBHC-ET

Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet

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Timing Diagrams
Figure 44:
Figure 45:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
COMMAND LATCH Cycle
ADDRESS LATCH Cycle
Note:
Note:
WE#
WE#
I/Ox
I/Ox
ALE
ALE
CLE
CE#
CLE
CE#
The x16 devices must have I/O[15:8] set to “0.”
The x16 devices must have I/O[15:8] set to “0.”
56
t WP
t CS
t ALS
t CLS
t CS
t CLS
t ALS
t DS
t WP
Address
Don‘t Care
t DS
COMMAND
t WC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t ALH
t DH
t WH
1Gb: x8, x16 NAND Flash Memory
t CH
t DH
t CLH
t ALH
Undefined
©2006 Micron Technology, Inc. All rights reserved.
Timing Diagrams
Don‘t Care

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