MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 46

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

RESET Operation
RESET FFh
Figure 37:
Table 12:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Condition
WP# HIGH
WP# LOW
Status Register Contents After Reset
RESET Operation
Status
Ready
Ready and write protected
The RESET command is used to put the memory device into a known condition and to
abort a command sequence in progress.
READ, PROGRAM, and ERASE commands can be aborted while the device is in the busy
state. The contents of the memory location being programmed or the block being erased
are no longer valid. The command register is cleared and is ready for the next command.
The status register contains the value E0h when WP# is HIGH;
with a 60h value. R/B# goes LOW for
command register. See Figure 37 and Table 12 for details.
The RESET command must be issued after power-on and before any other command is
issued to the device. The device will be busy for a maximum of 1ms at this time.
WE#
R/B#
I/Ox
CLE
CE#
Bit 7
1
0
command
RESET
FFh
Bit 6
1
1
t WB
46
Bit 5
1
1
t
RST after the RESET command is written to the
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bit 4
t RST
0
0
1Gb: x8, x16 NAND Flash Memory
Bit 3
0
0
Bit 2
0
0
Command Definitions
otherwise,
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Bit 1
0
0
it is written
Bit 0
0
0
Hex
E0h
60h