HBD678 Hi-Sincerity Mocroelectronics, HBD678 Datasheet
HBD678
Manufacturer Part Number
HBD678
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
1.HBD678.pdf
(2 pages)
HBD678
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBD678 is designed for use as output devices in
complementary general purpose amplifier applications.
Features
Absolute Maximum Ratings
Electrical Characteristics
Storage Temperature ............................................................................................ -50 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Tc=25 C) .................................................................................... 40 W
BVCBO Collector to Base Voltage ...................................................................................... 60 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 4 A
IB Base Current .................................................................................................................... 1 A
High Current Gain
Monolithic Constructor
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents
*VCE(sat)
*VBE(on)
BVCBO
BVCEO
BVEBO
Symbol
ICEO
ICBO
IEBO
*hFE
Min.
750
60
60
5
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
Typ.
-
-
-
-
-
-
-
-
-
(Ta=25 C)
(Ta=25 C)
Max.
200
200
2.5
2.5
2
-
-
-
-
Unit
mA
uA
uA
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=1mA
IC=50mA
VCB=30V
VCB=60V
VBE=5V
IC=1.5A, IB=30mA
IC=1.5A, VCE=3V
IC=1.5A, VCE=3V
IE=1mA
Test Conditions
Spec. No. : HE6625-A
Issued Date : 1994.10.04
Revised Date : 2000.10.01
Page No. : 1/2
HSMC Product Specification
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HBD678 Summary of contents
Page 1
... HI-SINCERITY MICROELECTRONICS CORP. HBD678 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD678 is designed for use as output devices in complementary general purpose amplifier applications. Features High Current Gain Monolithic Constructor Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25 C) ...
Page 2
HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension 3-Lead TO-126ML Plastic Package HSMC Package Code : D Inches DIM Min. Max. A 0.1356 0.1457 B 0.0170 0.0272 C 0.0344 0.0444 D 0.0501 ...