ipd03n03lbg Infineon Technologies Corporation, ipd03n03lbg Datasheet - Page 2

• Manufacturer Part Number: ipd03n03lbg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.7
1)
1)
3)
4)
5)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Current is limited by bondwire; with an R
See figure 3
T
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j,max
=150 °C and duty cycle D <0.25 for V
j
=25 °C, unless otherwise specified
thJC
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
GS
fs
(BR)DSS
GS(th)
=1.3 K/W the chip is able to carry 142 A.
thJC
thJA
DS(on)
G
<-5 V
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
V
V
SMD version
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=125 °C
=60 A
DS
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=4.5 V, I
=10 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
D
=70 µA
D
D
GS
GS
DS
DS(on)max
=60 A
=60 A,
=60 A
=60 A,
=0 V,
=0 V,
=0 V
IPD03N03LB G
5)
,
min.
1.2
30
60
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
120
1.6
0.1
4.1
3.9
3.0
2.8
1.3
10
10
-
-
-
-
IPS03N03LB G
max.
100
100
1.3
5.1
4.9
3.5
3.3
75
50
2
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-04-11