ipd03n03lbg Infineon Technologies Corporation, ipd03n03lbg Datasheet - Page 4

• Manufacturer Part Number: ipd03n03lbg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.7
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
120
100
100
80
60
40
20
10
DS
1
0
0.1
C
0
); T
)
limited by on-state
resistance
C
p
=25 °C; D =0
50
1
DC
T
V
C
DS
100
[°C]
[V]
100 µs
1 ms
10 ms
10 µs
10
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.001
0.01
100
=f(t
0.1
10
80
60
40
20
C
1
0
10
); V
p
0
0
)
-6
0.5
0.2
0.05
0.02
0.01
0.1
GS
IPD03N03LB G
≥10 V
10
p
0
-5
/T
single pulse
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
10
IPS03N03LB G
0
-2
150
10
0
-1
2008-04-11
200
10
1
0