byd31j NXP Semiconductors, byd31j Datasheet - Page 3

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byd31j

Manufacturer Part Number
byd31j
Description
Fast Soft-recovery Controlled Avalanche Rectifiers
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
1996 Sep 18
P
T
T
V
V
I
t
C
SYMBOL
SYMBOL
j
R
rr
dI
--------
stg
j
RSM
= 25 C unless otherwise specified.
F
(BR)R
d
dt
Fast soft-recovery
controlled avalanche rectifiers
R
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
forward voltage
reverse avalanche breakdown
voltage
reverse current
reverse recovery time
diode capacitance
maximum slope of reverse recovery
current
BYD31D to J
BYD31K and M
BYD31D
BYD31G
BYD31J
BYD31K
BYD31M
BYD31D to J
BYD31K and M
BYD31D to J
BYD31K and M
PARAMETER
PARAMETER
t = 20 s half sine wave; T
prior to surge
see Fig.7
I
see Fig.8
I
see Fig.8
I
V
see Fig.9
V
T
when switched from
I
measured at I
see Fig.12
f = 1 MHz; V
see Fig.10
when switched from
I
and dI
see Fig.13
F
F
R
F
F
j
R
R
= 0.5 A; T
= 0.5 A;
= 0.5 A to I
= 1 A to V
= 165 C; see Fig.9
= 0.1 mA
= V
= V
CONDITIONS
F
RRMmax
RRMmax
3
/dt = 1 A/ s;
CONDITIONS
j
R
R
= T
R
R
;
;
= 0 V;
= 1 A;
= 0.25A
30 V
j max
;
j
= T
MIN.
1100
Not recommended for new designs
300
500
700
900
j max
MIN.
TYP.
65
65
9
BYD31 series
Product specification
MAX.
MAX.
250
300
+175
+175
1.15
1.35
75
100
1
6
5
50
W
W
V
V
V
V
V
V
V
ns
ns
pF
A/ s
A/ s
C
C
A
A
UNIT
UNIT

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