mrf7s19080h Freescale Semiconductor, Inc, mrf7s19080h Datasheet - Page 6

• Manufacturer Part Number: mrf7s19080h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S19080HR3 MRF7S19080HSR3
6
20
19
18
17
16
15
14
1
562.5 mA
750 mA
937.5 mA
375 mA
Figure 5. Two - Tone Power Gain versus
I
DQ
= 1125 mA
V
Two −Tone Measurements, 10 MHz Tone Spacing
P
DD
out
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
, OUTPUT POWER (WATTS) PEP
Output Power
10
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
19
18
17
16
15
14
13
12
19
18
17
16
15
14
13
12
11
11
1880
1880
Broadband Performance @ P
Broadband Performance @ P
V
I
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
DQ
DD
PARC
= 750 mA, Single−Carrier W−CDMA
= 28 Vdc, P
V
I
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
η
DQ
IRL
DD
D
1920
= 750 mA, Single−Carrier W−CDMA
TYPICAL CHARACTERISTICS
= 28 Vdc, P
1920
100
out
PARC
IRL
= 24 W (Avg.)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
out
1960
200
= 49 W (Avg.)
1960
G
ps
2000
out
out
−10
−20
−30
−40
−50
−60
−70
= 24 Watts Avg.
= 49 Watts Avg.
2000
1
Figure 6. Third Order Intermodulation Distortion
I
2040
V
Two −Tone Measurements, 10 MHz Tone Spacing
DQ
1125 mA
η
DD
D
= 375 mA
G
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
ps
P
out
2040
2080
, OUTPUT POWER (WATTS) PEP
versus Output Power
38
36
34
32
30
50
48
46
44
42
−0.8
−1
−1.2
−2.6
−2.8
−3
−1.4
−3.2
937.5 mA
10
562.5 mA
−10
−15
−20
−25
−30
−10
−15
−20
−25
−30
Freescale Semiconductor
750 mA
RF Device Data
100
200